What is 3D V-NAND and how does it differ from existing technology? Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar V-NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilising a smaller footprint. Optimise computing with TurboWrite technology for unrivalled read / write speeds. Achieve ultimate read / write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. Compared to the 840 EVO, the 850 EVO shows an increased overall user experience of approximately 13%, partly thanks to the now 2x faster random write speeds. The 850 EVO delivers top-notch performance in its class, with sequential read and write speeds of 540 MB/s and 520 MB/s, respectively. Enjoy optimised random performance in all Queue Depths (QD) for client PC usage scenarios. Increase memory storage with RAPID mode. The Samsung 850 EVO M.2 is a speed machine. With the latest Samsung Magician software, you can activate the RAPID mode to tap unused PC memory (DRAM) and use it as cache storage up to 25% of the total DRAM capacity. With the dramatic increase in storage, data processing speeds and random QD can be up to 2x faster under the RAPID mode.
